http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007273843-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2006-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df3fde2ccab9d58344680943daf56b9 |
| publicationDate | 2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007273843-A |
| titleOfInvention | Film formation method, semiconductor layer, and semiconductor element |
| abstract | It is possible to form a film having a uniform and good crystal quality even when a film is formed using a highly active material having a short lifetime and existing in a monoatomic state such as Al or B. To do. One or more kinds of film forming raw materials G are supplied in a vapor phase on a substrate 200, and at least a part of the film forming raw materials G is decomposed, so that constituent elements of the film forming raw materials G are formed on the substrate 200. During vapor phase growth of the film including the film, the substrate 200 is irradiated with the laser light L from at least one direction so that the laser light L passes through the substrate 200 in a direction substantially horizontal to the substrate surface. Supply of the raw material G is implemented. [Selection] Figure 1 |
| priorityDate | 2006-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.