http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007258347-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36eadf525855adfc26ce5ddd85d650d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7439a13f373dcb31929718c37502df4
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67196
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
filingDate 2006-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73d9e87bdb4e2ab434a35625316a7dda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c95db6a6f3537b05cbfb6fb328360ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8dc98f89a4fe0ae8cce9b2240b368ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2848e6e5bf7b6b8908dcbe7ee5aa3b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c57a311782ab72baf7f02105994cf46
publicationDate 2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007258347-A
titleOfInvention Compound semiconductor manufacturing method and compound semiconductor manufacturing apparatus
abstract PROBLEM TO BE SOLVED: To provide a method for producing a compound semiconductor capable of improving the quality of each thin film layer constituting a laminated structure. Each thin film layer is sequentially grown on a silicon substrate 2 in first and second vapor phase growth chambers 6a and 6b dedicated to the respective thin film layers, whereby first and first thin films are grown. In the two vapor phase growth chambers 6a and 6b, the gas phase growth chambers 6a and 6b are made to have nothing other than those related to the raw material gases used in the vapor phase growth chambers 6a and 6b (including deposits and deposits). It prevents the raw material gas for the thin film layer from causing an unexpected reaction and degrading the quality of the second thin film layer. Further, the transport space 35 of the silicon substrate 2 is set in a nitrogen atmosphere or vacuum that suppresses oxidation, and when the silicon substrate 2 is transported, oxide is generated in the first thin film layer that is the outermost layer at that time. To suppress that. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011220025-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011114013-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112010003683-T5
priorityDate 2006-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09296272-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24404
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9321
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457773519
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559527
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5976
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID219868
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31216
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15051
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559532
http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID219868
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123165
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415784996
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419550829
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415717719
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084169
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7357
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID407330845
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518864
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6061
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID76919
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419521631
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID222
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559367
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID88409
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414678025
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527240
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970

Total number of triples: 59.