Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36eadf525855adfc26ce5ddd85d650d2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7439a13f373dcb31929718c37502df4 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67196 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
filingDate |
2006-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73d9e87bdb4e2ab434a35625316a7dda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c95db6a6f3537b05cbfb6fb328360ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8dc98f89a4fe0ae8cce9b2240b368ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2848e6e5bf7b6b8908dcbe7ee5aa3b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c57a311782ab72baf7f02105994cf46 |
publicationDate |
2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2007258347-A |
titleOfInvention |
Compound semiconductor manufacturing method and compound semiconductor manufacturing apparatus |
abstract |
PROBLEM TO BE SOLVED: To provide a method for producing a compound semiconductor capable of improving the quality of each thin film layer constituting a laminated structure. Each thin film layer is sequentially grown on a silicon substrate 2 in first and second vapor phase growth chambers 6a and 6b dedicated to the respective thin film layers, whereby first and first thin films are grown. In the two vapor phase growth chambers 6a and 6b, the gas phase growth chambers 6a and 6b are made to have nothing other than those related to the raw material gases used in the vapor phase growth chambers 6a and 6b (including deposits and deposits). It prevents the raw material gas for the thin film layer from causing an unexpected reaction and degrading the quality of the second thin film layer. Further, the transport space 35 of the silicon substrate 2 is set in a nitrogen atmosphere or vacuum that suppresses oxidation, and when the silicon substrate 2 is transported, oxide is generated in the first thin film layer that is the outermost layer at that time. To suppress that. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011220025-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011114013-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112010003683-T5 |
priorityDate |
2006-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |