| abstract |
An object of the present invention is to obtain a semiconductor device having excellent performance by suppressing the influence of a metal element in a crystalline silicon film obtained by using a metal element. An active layer composed of a crystalline silicon film obtained by utilizing a metal element that promotes crystallization, and a gate insulating film formed on the active layer, the gate insulating film Has an insulating film containing a halogen element. A metal element that promotes crystallization is fixed by an insulating film containing a halogen element to prevent the function of the gate insulating film from deteriorating. [Selection] Figure 29 |