| abstract |
A positive resist composition that enables high-level compatibility with PEB temperature dependency, line edge roughness (LWR), dark / bright pattern shape difference, development defect, and dry etching resistance, and the positive resist A pattern forming method using the composition is provided. (A) A resin having a lactone structure and having a repeating unit (A1) having a cyano group and having increased solubility in an alkaline developer by the action of an acid; (B) having a lactone structure; And a resin having a repeating unit (B1) having no cyano group and having increased solubility in an alkali developer by the action of an acid, (C) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (D) a solvent. And a pattern forming method using the positive resist composition. [Selection figure] None |