http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007235062-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
filingDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cd084e39929d27670034baba862e473 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f8099d4ec6f7a254b1ad14426c44fdb |
publicationDate | 2007-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007235062-A |
titleOfInvention | Epitaxial wafer and electronic device, and vapor phase epitaxial growth method of III-V compound semiconductor crystal |
abstract | An epitaxial wafer and an electronic device capable of making an etching stop by selective etching on the surface of the InGaP layer even if the etching stopper layer using an InGaP crystal is made thinner than 5 nm of the epitaxial wafer having an etching stopper layer and the thickness is reduced. The present invention provides a vapor phase epitaxial growth method for III-V compound semiconductor crystals. An epitaxial wafer of the present invention is obtained by providing an epitaxial layer 2 of a group III-V compound semiconductor crystal on a semi-insulating compound semiconductor substrate 1, the epitaxial layer 2 having an etching stopper layer, In addition, the etching stopper layer is composed of the InGaP mixed crystal layer 3 having an irregular crystal structure. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016114260-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010263018-A |
priorityDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.