http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007234875-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
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filingDate 2006-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5223e91e87760afbb76e6a00400dd0c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77f50f21479b84ff7fbac858c0c9fffa
publicationDate 2007-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007234875-A
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract A semiconductor device including a redundant circuit for laser irradiation and a manufacturing method thereof are provided while suppressing an increase in chip area and manufacturing cost. A step of forming a circuit having an original function as a first active layer on a substrate, a step of forming an insulating layer in the first active layer, and forming a microhole in the insulating layer Forming a semiconductor layer on the insulating layer in which the micropores are formed, and performing heat treatment by laser irradiation on the semiconductor layer, so that the semiconductor substrate is substantially single-crystallized from the micropores as a starting point. Forming a crystal grain, and forming a redundant circuit for laser repair as a second active layer using the substantially single crystallized crystal grain. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020123755-A
priorityDate 2006-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 21.