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publicationDate 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007220891-A
titleOfInvention Post-CMP processing liquid and method for manufacturing semiconductor device using the same
abstract PROBLEM TO BE SOLVED: To provide a post-CMP processing liquid capable of efficiently removing substances adhered to a wiring layer or an insulating film surface. SOLUTION: Water, resin particles having a concentration of 0.01 wt% or more and 1 wt% or less, having a carboxyl group and a sulfonyl group on the surface, a primary particle diameter of 10 nm or more and 60 nm or less, and a carboxyl group-containing first particle. This is a post-CMP processing solution containing one surfactant, a second surfactant having a sulfonyl group, and tetramethylammonium hydroxide. The pH is 4 or more and 9 or less, and the polishing rate of the insulating film and the conductive film is 10 nm / min or less. [Selection figure] None
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