http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007220845-A

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filingDate 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6f229039f8c1d464840a954959d3b89
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publicationDate 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007220845-A
titleOfInvention Antireflection film and exposure method
abstract In an immersion lithography technique, there is provided an antireflection film capable of sufficiently reducing the reflectance at the interface between a resist layer and a silicon semiconductor substrate even when the exposure light is incident obliquely. A two-layer antireflection film has a wavelength of 190 to 195 nm and is used when a resist layer is exposed in an exposure system having a numerical aperture of more than 1.0 and not more than 1.1. The complex refractive indexes N 1 and N 2 of the upper layer and the lower layer, which are formed between the layer and the silicon nitride film formed on the surface of the silicon semiconductor substrate and constitute the antireflection film, are expressed as N 1 = n 1 −k 1 i , N 2 = n 2 −k 2 i, the upper and lower layer thicknesses are d 1 and d 2, and the combination of the values of [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ] When a predetermined combination is selected, n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relational expression. {(n 1 −n 10 ) / (n 1m −n 10 )} 2 + {(k 1 −k 10 ) / (k 1m −k 10 )} 2 + {(d 1 −d 10 ) / (d 1m −d 10 )} 2 + {(n 2 −n 20 ) / (n 2m −n 20 )} 2 + {(k 2 −k 20 ) / (k 2m −k 20 )} 2 + {(d 2 − d 20 ) / (d 2m −d 20 )} 2 ≦ 1 [Selection figure] None
priorityDate 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.