http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007220795-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2006-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b25e339706f21d02d360ca2d041e7880 |
| publicationDate | 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007220795-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | To improve wiring characteristics of a multilayer wiring structure using a low dielectric constant insulating film. First, dry etching is performed to include a stopper insulating film 21c in a laminated insulating film 24c composed of a stopper insulating film 21c / a low dielectric constant insulating film 22c / a cap insulating film 23c using the photoresist film 25c as a mask. Thus, the wiring trench 32 is formed in the laminated insulating film 24c. Next, after removing the photoresist film 25 c by reducing plasma treatment, a wiring is formed in the wiring groove 32. [Selection] Figure 11 |
| priorityDate | 2006-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.