| abstract |
An object of the present invention is a polishing liquid using solid abrasive grains used in barrier CMP for polishing a barrier metal material, and an abrasive for a barrier layer capable of achieving both suppression of erosion and suppression of scratch. Is to provide. A polishing liquid of the present invention is a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, and includes a colloidal silica whose surface is covered with aluminum, an oxidizing agent, and a pH. Is a polishing liquid for a barrier layer, wherein the polishing liquid is 2-7. [Selection figure] None |