http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007207845-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e92d4f1c68b498230b64f515ab041bf0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cd5abae08ed9f542a6babe32742959b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e402180fa0071b29eb7e0d1c378050 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1e8d6c4768249bd285291daf68cd81a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7d0dd318979cc33932d7803aa12f215 |
| publicationDate | 2007-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007207845-A |
| titleOfInvention | Semiconductor light emitting device |
| abstract | A semiconductor light emitting device capable of reducing the detection level of spontaneous emission light by a semiconductor photodetector by reflecting spontaneous emission light with a high reflectivity and thereby improving the light detection accuracy. A surface emitting semiconductor laser, a semiconductor photodetector, and a light control layer are provided. The surface emitting semiconductor laser 1 includes a substrate 10 and a semiconductor multilayer structure 11 including a light emitting region 14A. The semiconductor photodetector 2 includes a substrate 20 having a hole 20A in a region corresponding to a region including the light emitting region 14A, and a semiconductor multilayer structure 21 having a light absorption layer 22 that absorbs part of incident light. The light control layer 3 is formed in a region corresponding to the peripheral region of the light emitting region 14A in the semiconductor multilayer structure 11, and has an opening 3A in a region corresponding to the light emitting region 14A. The light control layer 3 and the semiconductor photodetector 2 are integrally formed with the surface emitting semiconductor laser 1 so as to overlap with each other on the semiconductor multilayer structure 11 side of the surface emitting semiconductor laser 1 in this order. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4674642-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010182972-A |
| priorityDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.