| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate |
2006-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66c263db404f82180270228729a04ecf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d035d24ae86af4b826c4d7bf0b1eb13 |
| publicationDate |
2007-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007204309-A |
| titleOfInvention |
Single crystal growth apparatus and single crystal growth method |
| abstract |
The present invention provides a method for obtaining a high-quality silicon carbide single crystal having a high growth rate without attaching polycrystal to a gas guide portion. A raw material for growing a single crystal is contained in a crucible, and the raw material is heated and sublimated using a high-frequency coil outside a heat insulating material around the crucible and supplied onto a seed crystal made of a single crystal. In a single crystal growth method for growing a single crystal on a seed crystal, a conical gas guide portion 9 having an opening at a predetermined distance from the seed crystal 3 and having a larger diameter on the raw material side than the seed crystal 3 side is provided. And the crucible body 2 is heated at the position of the high frequency coil 7 at a position where the angle formed by the isotherm in the crucible at the time of heating and the conical inner wall of the gas guide portion 9 is substantially perpendicular. The heat insulating material 8 arranged on the upper side is arranged with a predetermined distance from the crucible lid 1. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101419469-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017057742-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111411401-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009274933-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115558987-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115558987-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014024703-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104278322-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106048715-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015086115-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7298940-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011190157-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106929913-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108138359-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101101984-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011168431-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108085745-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016011215-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11339497-B2 |
| priorityDate |
2006-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |