http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007204292-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-30 |
| filingDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b14cf5c4455f11e5b1daa94070738b72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dfb57ccb0fbe913268e2570d1b884a2 |
| publicationDate | 2007-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007204292-A |
| titleOfInvention | Rare earth vanadium oxide single crystal and method for producing the same |
| abstract | The present invention provides a high-quality rare earth vanadium oxide single crystal with little reduction in transmittance due to generation of low-valent vanadium ions and a method for producing the same. In the method for producing a rare earth vanadium oxide single crystal, a single crystal used as a medium material for laser generation is obtained by crystal growth from a heated rare earth vanadium oxide raw material melt by a pulling method. When crystals start to precipitate from the liquid, the input power that contributes to the heating of the raw material melt is temporarily increased to suppress the maximum precipitation rate per unit growth area of the crystals. [Selection] Figure 3 |
| priorityDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.