http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007201032-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28
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filingDate 2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a46eb7c3cf9d2e4f41ceaa9eac9cdfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efd068ff1a1ec85121fc7b77693769e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a4efa9edd8c6abb7c75e4db7f345e07
publicationDate 2007-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007201032-A
titleOfInvention Oxychalcogenide thin film growth method, oxychalcogenide thin film, oxide semiconductor thin film growth method, oxide semiconductor thin film, semiconductor device manufacturing method, and semiconductor device
abstract Provided is a method for growing an oxychalcogenide-based thin film, which can obtain a p-type layer, can grow a oxychalcogenide-based thin film uniformly over a large area, and is excellent in mass productivity. Solution vaporization CVD is used to grow an oxychalcogenide-based thin film. For example, after forming a Cu thin film 102 on a substrate 101 made of a YSZ substrate, an MgO substrate, or the like, an amorphous LaCuOS thin film 103 is grown by a solution vaporization CVD method. For example, La (EDMDD) 3 is used as the La material, and Cu (EDMDD) 2 is used as the Cu material. The growth temperature is 400 ° C. or lower. Thereafter, the amorphous LaCuOS thin film 103 is crystallized by a reactive solid phase epitaxial growth method to obtain a crystalline LaCuOS thin film 104. [Selection] Figure 2
priorityDate 2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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