http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007194672-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223 |
| filingDate | 2007-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d0cfd1f47d9d226f4144890cf9c4428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1ba487c8c31a83e7a0433aede57b6d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec4aa3f1ba55f9f1eb9f7318cc65fc3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d16a61146e19f9f69bde2ad99386303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fe83ad08cfb08dd8fe88fc3c4d6d7ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_748694fe1e51c756247a487d7d858cc7 |
| publicationDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007194672-A |
| titleOfInvention | Semiconductor light emitting device |
| abstract | Provided is a semiconductor laser having a highly reliable structure in which a quantum well effect is improved to improve temperature characteristics and lattice mismatch is suppressed. In a semiconductor laser having a superlattice structure active layer 8 in which a well layer 8b is sandwiched between barrier layers 8a and 8c on a GaAs substrate 2, the well layer 8b is made of Ga 1 -x In x N y As 1. over y, barrier layer 8a, 8b is formed by Ga 1-i in i as 1 -j P j or GaAs 1-j P j, the well layer 8b and the barrier layer 8a, by laminating the 8c at least one set or more Yes. Even if the In composition ratio x of the well layer 8b is reduced, the confinement effect of electrons and holes in the conduction band and valence band in the quantum well can be sufficiently obtained, and the temperature characteristics are improved. Furthermore, by reducing the In composition ratio x, lattice mismatch is suppressed, stress strain from the GaAs substrate 2 is suppressed, and reliability is improved. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109671813-A |
| priorityDate | 1997-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.