| abstract |
A semiconductor device with improved operational reliability is provided. A bump electrode 8s for a source electrode is provided as an oscillation shield between a bump electrode 8g for a gate electrode and a bump electrode 8d for a drain electrode of a semiconductor chip 1 constituting an RF power module. The bump electrode 8s for the source electrode has a strip-like pattern longer than the other bump electrodes 8g and 8d. The bump electrodes 8g, 8d, and 8s have a vertical configuration in which a metal layer is provided on a bonding pad via a base metal and a solder layer is further provided thereon. [Selection] Figure 3 |