http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007184517-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e4d965207de3a985d7f49e52b3be483
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_089cbee78b756f45d73bfceb1a66caa6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d7ff4328abc99db71b83d8c371c6180
publicationDate 2007-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007184517-A
titleOfInvention Alternating source / drain and thin channel TFT structure and method of manufacturing the same
abstract An alternating source / drain that simplifies the conventional method by reducing the number of mask steps, further suppressing the electric field near the drain junction and reducing leakage current to achieve good results A method of manufacturing a thin channel TFT structure is provided. A method of manufacturing a TFT structure according to the present invention includes (1) laminating an a-Si layer on a substrate, and then applying a general photolithography step and an RIE etching step to obtain a high region and a low region. A remaining width of the etched a-Si thin channel is about 5 to 200 nm, and further annealing to change the a-Si to poly-Si (02), (2) A step of forming a gate region (05), a source / drain region (07), and a channel, (3) a step of applying implantation, and (4) a step of applying a junction. [Selection] Figure 1
priorityDate 2006-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000216387-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002033485-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408

Total number of triples: 21.