http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007180565-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2007-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8878d59bd227d23da90a7789b635ede
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e51d4700e878fc7b40236c5a0f0aaae2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb761a089dba691e10fe050a316ea73
publicationDate 2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007180565-A
titleOfInvention Method for manufacturing semiconductor device
abstract A method for manufacturing a semiconductor device having a display portion that is small in size, reduces defects due to mounting of a substrate such as an IC chip, and has a high speed. A semiconductor display portion and other circuit blocks are integrally formed on a substrate having an insulating surface by using a TFT manufacturing process that realizes high mobility. Specifically, a semiconductor active layer crystallization process using a continuous wave laser is used. Further, high production efficiency is realized by selectively performing the crystallization process using a continuous wave laser only on the circuit blocks that require high-speed operation. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010147368-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112930244-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112930244-B
priorityDate 2001-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID57005
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425270609
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID69667
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID57005
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098968
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526467
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447567011
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9756
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID522684
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261

Total number of triples: 32.