| abstract |
Provided is a semiconductor device in which the thickness of a metal wiring is made uniform and current concentration generated in a plurality of adjacent metal wirings is suppressed, thereby suppressing an increase in wiring resistance. A plurality of metal wirings 11 and 12 are disposed adjacent to each other, and slits 13 and 14 are formed in the metal wirings 11 and 12, respectively, and at least one of the plurality of metal wirings 11 and 12 is provided. The slits 13 and 14 in the metal wirings 11 and 12 are formed asymmetrically with respect to the extending direction of the metal wirings 11 and 12 when viewed from the upper surface of the metal wirings 11 and 12. [Selection] Figure 1 |