http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007165770-A

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filingDate 2005-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77576b39b1d72c3a2bb4d80014dcde2f
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publicationDate 2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007165770-A
titleOfInvention Laser crystallization apparatus and crystallization method
abstract A semiconductor film having a large crystal grain size is formed by irradiating a laser beam having a predetermined light intensity distribution onto a substrate positioned at high speed and with high precision to melt and crystallize the semiconductor film. It is to provide a possible high-throughput laser crystallization apparatus and crystallization method. A laser crystallization apparatus that solves the above problems includes a laser light source that generates laser light, and a phase shifter that modulates the laser light to give a predetermined light intensity distribution. A laser crystallization apparatus that irradiates a thin film provided on a substrate with the modulated laser beam and melts and crystallizes the thin film, and holds a mark provided on the substrate and the substrate A substrate holding stage that moves in a predetermined direction, a mark measuring unit that measures a time during which the mark passes a predetermined position during the movement of the substrate holding stage, and the laser beam based on the measurement time by the mark measuring unit Signal generating means for generating a trigger signal for instructing the irradiation. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012084620-A
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Total number of triples: 27.