| abstract |
Disclosed is a gallium nitride compound semiconductor light-emitting device having a positive electrode having an opening and excellent in light extraction efficiency. An n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer made of a gallium nitride compound semiconductor are stacked on a substrate in this order, and a positive electrode and a negative electrode are in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively. The gallium nitride is characterized in that the positive electrode is a positive electrode having an opening, and at least a part of the surface of the p-type semiconductor layer in the opening is an uneven surface derived from a spherical granular material. Compound semiconductor light emitting device. [Selection] Figure 1 |