http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007165014-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02
filingDate 2005-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20f49153bd80b023ac1ae16101226263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4222e5f6b401c19a69c10fbdc1b57a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ca39c9c93f1d7de807904c6df67af20
publicationDate 2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007165014-A
titleOfInvention Manufacturing method of electron emission source
abstract The present invention provides a method for manufacturing an electron emission source capable of easily removing a protective layer from an electron emission material layer without degrading the performance of the electron emission material layer. An aluminum layer as a protective layer is formed on the resin material layer in a state where the resin material layer as the buffer layer exists on the CNT layer as the electron emission material layer. Thereafter, the resin material layer 4 is burned away by the heat treatment. As a result, the aluminum layer 5 and the CNT layer 3 come into contact. Therefore, compared with the case where the aluminum layer 5 is formed directly on the CNT layer 3, the adhesion between the aluminum layer 5 and the CNT layer 3 is low. Therefore, when removing the aluminum layer 5, the aluminum layer 5 can be easily removed from the CNT layer 3. As a result, the adverse effect on the CNT layer 3 in the removal process of the aluminum layer 5 is small. [Selection] Figure 5
priorityDate 2005-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.