| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2005-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c2252eebde80815f89aee8792cb0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a11f603fdc703d99c4069f0826b953b |
| publicationDate |
2007-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007149794-A |
| titleOfInvention |
Field effect transistor |
| abstract |
An object of the present invention is to provide a field effect transistor that realizes a normally-off operation while suppressing an increase in on-resistance. The material constituting the gate electrode 107 is made of a conductive oxide having a work function larger than that of conventionally used Ni or the like, so that the sheet carrier concentration at the heterojunction portion is not lowered. Since a normally-off transistor can be realized, a normally-off operation can be realized while suppressing an increase in on-resistance. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140124273-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009032803-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7185867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019201185-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011013500-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102080745-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011035072-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011129607-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013191868-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8525184-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4700125-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009054807-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8207574-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8227810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101853881-A |
| priorityDate |
2005-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |