| abstract |
An etching rate is sufficiently reduced, a high CMP rate is maintained, and a highly reliable embedded pattern is formed. Protection is achieved by forming physical adsorption and / or chemical bonds on the surface of a metal film, such as (1) a metal oxidant, (2) a metal oxide solubilizer, and (3) an amino acid or an azole. A first protective film forming agent that forms a film, and (4) a second protective film formation that assists the first protective film forming agent, such as polyacrylic acid, polyamic acid, or a salt thereof, to form the protective film. And (5) a metal-polishing liquid containing water. [Selection figure] None |