| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2005-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a11f603fdc703d99c4069f0826b953b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10c21e69f8491fc929af440bb24dd943 |
| publicationDate |
2007-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007142144-A |
| titleOfInvention |
Field effect transistor integrated circuit and manufacturing method thereof |
| abstract |
In a field effect transistor integrated circuit using a nitride compound semiconductor, a transistor integrated circuit with improved heat dissipation and a small chip area and a method for manufacturing the same are provided. A through-hole is formed in an epitaxial growth layer constituting an AlGaN / GaN field effect transistor, and a conductive material such as a thick metal film and a wiring metal are formed above and below the epitaxial growth layer, respectively, and a conductive metal. The conductive material or the wiring metal is electrically connected to the electrode of the field effect transistor through the through hole formed in the epitaxial growth layer. The wiring metal is laid out so that the wiring metal and the conductive material form a microstrip line, and this is used as a passive element to combine with one or a plurality of field effect transistors to form a quasi-millimeter wave high frequency integrated circuit. . The epitaxial growth layer is separated from a substrate used for crystal growth such as sapphire. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018064108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019537284-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013187546-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016063167-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9608100-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7195265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101920715-B1 |
| priorityDate |
2005-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |