http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007141460-A

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filingDate 2005-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afbc5f9708383e9a631da5049898684
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publicationDate 2007-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007141460-A
titleOfInvention Oxide ion conductive material comprising bismuth / erbium / niobium oxide solid solution and method for producing the same
abstract An oxide ion conductor that is stable without decomposition or phase transition even in a low temperature region and exhibits high oxide ion conduction is provided. A general formula (Bi 2 O 3 ) x (Er 2 O 3 ) y (NbO 2.5 ) z having a face-centered cubic system structure. An oxide ion conductive material comprising a bismuth-erbium-niobium oxide solid solution represented by (0.66 <x <0.69, 0.215 <y <0.248, 0.075 <z <0.108, where x + y + z = 1). Unlike the conventional bismuth double oxide belonging to the face-centered cubic system, the oxide ion conductive material of the present invention, It is stable without decomposition or phase transition even in the low temperature range from 600 ° C to 550 ° C, and exhibits high oxide ion conduction of 10 -2 S cm -1 or higher. [Selection] Figure 1
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