http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007129250-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C15-04
filingDate 2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2783e49d2cdc0691fc0f52fcc953bda9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa9d7d40ff5dbfd388e79415eb0f9329
publicationDate 2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007129250-A
titleOfInvention Semiconductor device
abstract 【Task】 Provided is a semiconductor device having a plurality of basic units including memory cells and logic cells on the same semiconductor substrate, which can be easily manufactured and can be highly integrated. [Solution] The semiconductor device is a semiconductor device formed on a semiconductor substrate and having a plurality of identical or symmetric unit structures including memory elements and logic elements, each unit structure being formed in a first active region A logic element series-connected transistor having a DRAM cell, a second / third gate electrode and a source / drain region having a silicide layer formed in the second active region, and a pair of the source / drain regions The first and second signal lines connected to the gate, the third signal line connected to the second gate electrode, and the storage electrode of the DRAM capacitor are formed below, and the storage electrode and the third gate electrode are connected. A conductive connecting member. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109037215-A
priorityDate 2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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