http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007129167-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2005-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12a8dc53697a9aa533b75f401ecb5452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51889b3bbdd0ad4c703d1be983e955e0 |
| publicationDate | 2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007129167-A |
| titleOfInvention | Polishing liquid for metal |
| abstract | An object of the present invention is to provide a metal polishing liquid capable of realizing a stable polishing rate regardless of a production lot by removing halogen ions in the metal polishing liquid to an extremely low level. A metal polishing liquid used for chemical mechanical planarization of a substrate for a semiconductor integrated circuit, which contains an oxidizing agent, an organic acid, a passive film forming agent, and contains silver ions. A metal-polishing liquid characterized by having a reduced halogen ion concentration. The halogen ion concentration in the metal polishing liquid is preferably 1 ppm or less. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011523207-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115181569-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016058730-A |
| priorityDate | 2005-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 325.