| abstract |
It is possible to provide a semiconductor light emitting element and a semiconductor light emitting device with high luminous efficiency and high color rendering. A first semiconductor layer made of a first conductivity type semiconductor provided on a substrate, a second semiconductor layer made of a second conductivity type semiconductor provided on the first semiconductor layer, and a first semiconductor layer. A plurality of quantum dots 6a made of a semiconductor material, which is provided between the semiconductor layer and the second semiconductor layer and has a forbidden band width smaller than the forbidden band widths of the semiconductors of the first and second semiconductor layers. And a light emitting layer 6 that emits light having a wavelength corresponding to the ground level or the excitation level. [Selection] Figure 1 |