http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007115923-A

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filingDate 2005-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb35f93ecf0e9a783d1c629870879601
publicationDate 2007-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007115923-A
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract A semiconductor device manufacturing method capable of easily and reliably manufacturing a semiconductor device having excellent reliability, and a semiconductor device manufactured by such a semiconductor device manufacturing method are provided. 4D, a semiconductor device 1 includes a step of preparing a semiconductor substrate 11 having a semiconductor element 12 and a wiring 14 provided with a terminal 15, a step of forming a resist layer 18, and the like. The sacrificial layer 20 is formed on the upper surface of the terminal 15 and the bump 13 is formed by bonding a solder ball containing Sn to the upper surface of the sacrificial layer 20. The sacrificial layer 20 is a layer that sacrifices to prevent or suppress the phenomenon that the thickness of the terminal 15 is reduced, that is, the so-called copper erosion, by contacting with the molten solder and diffusing and disappearing in the bumps 13. It is. [Selection] Figure 4
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