http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007115923-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
filingDate | 2005-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb35f93ecf0e9a783d1c629870879601 |
publicationDate | 2007-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007115923-A |
titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
abstract | A semiconductor device manufacturing method capable of easily and reliably manufacturing a semiconductor device having excellent reliability, and a semiconductor device manufactured by such a semiconductor device manufacturing method are provided. 4D, a semiconductor device 1 includes a step of preparing a semiconductor substrate 11 having a semiconductor element 12 and a wiring 14 provided with a terminal 15, a step of forming a resist layer 18, and the like. The sacrificial layer 20 is formed on the upper surface of the terminal 15 and the bump 13 is formed by bonding a solder ball containing Sn to the upper surface of the sacrificial layer 20. The sacrificial layer 20 is a layer that sacrifices to prevent or suppress the phenomenon that the thickness of the terminal 15 is reduced, that is, the so-called copper erosion, by contacting with the molten solder and diffusing and disappearing in the bumps 13. It is. [Selection] Figure 4 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010125639-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007250849-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112009004978-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450796-B2 |
priorityDate | 2005-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.