| abstract |
Provided is a capacitor of a semiconductor device using a TiO 2 dielectric film having a high dielectric constant while being a substance having a simple structure, and a manufacturing method thereof capable of a low temperature process. A Ru bottom electrode A is formed on the semiconductor substrate, there is the Ru bottom electrode is formed by oxidation, and RuO 2 pretreated film having a rutile crystal structure, the crystal structure of the RuO 2 pretreated film A capacitor of a semiconductor device comprising: a TiO 2 dielectric film formed in a rutile crystal structure and doped with impurities; and an upper electrode formed on the TiO 2 dielectric film. According to the method for manufacturing a capacitor of a semiconductor device according to the present invention, after forming a Ru lower electrode on a semiconductor substrate, the surface of the Ru lower electrode is oxidized to form a RuO 2 pretreatment film having a rutile crystal structure. Doping impurities into TiO 2 dielectric film while along the crystal structure of the RuO 2 pretreated film is formed of TiO 2 dielectric layer with rutile crystal structure on RuO 2 pretreated film. Thereafter, an upper electrode is formed on the TiO 2 dielectric film. [Selection] Figure 1 |