| abstract |
A solder bump structure is provided. In one aspect, a solder bump structure is utilized in a semiconductor device such as an integrated circuit. The semiconductor device comprises an active device disposed on a semiconductor substrate, an interconnect layer comprising copper formed on the active device, and an outermost metallization layer located over the interconnect layer. The outermost metallization layer includes aluminum and includes at least one bonding pad that is electrically connected to the interconnect layer and at least one interconnect runner. An under bump metallization (UBM) layer is placed over the bonding pad and a solder bump is placed over the UBM. [Selection] Figure 2A |