| abstract |
Disclosed is a first dielectric thin film, and a dielectric forming composition is applied on the dielectric thin film to form a second dielectric thin film so that the surface of the first dielectric thin film is dense. A layer is formed to ensure high flatness of the film. A metal alkoxide, a metal carboxylate, a metal complex, and a metal hydroxide containing a metal species A and a metal species B are formed on a dielectric thin film 31 having an ABOx type perovskite crystal structure having a void of 10 nm or more. A dielectric thin film 32 is formed by applying and heating a dielectric forming composition containing at least one compound selected from the group and an organic solvent, and the dielectric film 3 having an ABOx type perovskite crystal structure is formed. To do. The dielectric forming composition enters the void 42 of the dielectric thin film 31, and the void on the surface of the dielectric thin film 31 is embedded with the dielectric thin film 32, so that the region becomes a dense film. [Selection] Figure 8 |