http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007088298-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate | 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e793791aeb549b106faa003a6d7c98a0 |
| publicationDate | 2007-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007088298-A |
| titleOfInvention | Chemical mechanical planarization method |
| abstract | PROBLEM TO BE SOLVED: To provide a chemical mechanical planarization method for polishing without damaging a silica film having a low relative dielectric constant used as an interlayer insulating film in a semiconductor element or the like. A silica-based film obtained by coating a film-forming composition containing (a) a siloxane resin and (b) an alkylene glycol dialkyl ether or dialkylene glycol dialkyl ether is interlayer-insulated. A chemical mechanical planarization method comprising polishing a semiconductor integrated circuit used as a film with a polishing liquid containing no inorganic abrasive grains. [Selection figure] None |
| priorityDate | 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 94.