http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007073690-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2005-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f91458b03f5fdd20ed93a9f67ac4e7ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bfe319e4870e9b7e481ca34015aef02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eae19e0f0b1011c6946253d97fe87423 |
| publicationDate | 2007-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007073690-A |
| titleOfInvention | Gallium nitride compound semiconductor light emitting device |
| abstract | PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light emitting device having excellent light extraction efficiency and low driving voltage (Vf). An n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer made of a gallium nitride compound semiconductor are stacked on a substrate in this order, and a positive electrode and a negative electrode are in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p-type semiconductor layer in contact with the positive electrode has a region where p-type impurities and hydrogen atoms coexist, and at least a portion of the positive electrode in contact with the p-type semiconductor layer is made of an n-type conductive translucent material. A gallium nitride-based compound semiconductor light emitting device. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8436396-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014154808-A |
| priorityDate | 2005-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.