patent/JP-2007067107-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007067107-A

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filingDate	2005-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c899feebfac4469fc05af4b6cefebfa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5698ab1a22b1c0da8eb1e83b77336cfc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fa39ae0c20fa3e3387fa680daf6ff91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fbd77ab9c81d24d5e4953c31068304f
publicationDate	2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	JP-2007067107-A
titleOfInvention	Manufacturing method of semiconductor device
abstract	PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of ensuring sufficient adhesion of a wiring member and preventing separation of the wiring member until a barrier layer having a function of improving adhesion is formed. To do. (A1) A recess is formed in an insulating film formed on a semiconductor substrate. (A2) A first film made of Mn is formed by CVD so as to cover the inner surface of the recess and the upper surface of the insulating film. (A3) A conductive material containing Cu as a main component is deposited on the first film, and the concave portion is filled with the conductive material. (A4) The semiconductor substrate is annealed. [Selection] Figure 3-2
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009062599-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008261895-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101171587-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013219380-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010004998-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009016782-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8247321-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101214704-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8003518-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008126206-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8125085-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101209997-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008149844-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010147140-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010242187-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8084860-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010212497-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8089158-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101151513-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859421-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010021447-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9153481-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101275679-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8653665-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8440563-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136132-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010050359-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8242015-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010116889-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009034865-A1
priorityDate	2005-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 63.