http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007066929-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-341 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369 |
| filingDate | 2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc601cb0260b292ab03c64daf258f220 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07b235b04330fa1772023fcd455cd5ae |
| publicationDate | 2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007066929-A |
| titleOfInvention | Solid-state imaging device |
| abstract | A solid-state imaging device capable of suppressing the occurrence of charge transfer failure is provided. In this solid-state imaging device, a transfer area 8 on an imaging unit 1 formed on an n-type silicon substrate 11 located between two adjacent pixel separation areas 7 and between two adjacent pixel separation areas 7 are provided. A transfer region 9a in the vicinity of the boundary formed so as to be adjacent to the transfer region 8 on the imaging unit 1 side in the electron transfer direction, and the transfer region 8 on the imaging unit 1 side. And a transfer electrode 16b formed on the transfer region 9a near the boundary. Further, in the charge transfer path toward the transfer area 9a of the storage portion 2 side from the n + -type impurity regions 14a of the imaging unit 1 side of the transfer area 8, the n + -type impurity regions 14a of the imaging unit 1 side of the transfer area 8 one An n-type impurity region 13 having an n-type impurity concentration lower than that of the n + -type impurity region 14a of the transfer region 8 on the imaging unit 1 side is formed in the transfer region 9a on the storage unit 2 side corresponding to the part. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010109196-A |
| priorityDate | 2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.