| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d72339a6b893476ba374b394b9685349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6303 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-15 |
| filingDate |
2006-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc24b2a656ef43618bb0f698609498bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f23d5721de295b02096ee0589bc5e7d |
| publicationDate |
2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007063122-A |
| titleOfInvention |
Semiconductor device substrate |
| abstract |
A semiconductor device substrate having high thermal conductivity and excellent heat dissipation is provided. A ratio of X-ray diffraction intensity IAl 2 Y 4 O 9 of Al 2 Y 4 O 9 (201 plane) to X-ray diffraction intensity IAlN of aluminum nitride (101 plane) (IAL 2 Y 4 O 9 / IALN). Is a substrate for a semiconductor device, characterized by comprising an aluminum nitride sintered body having a thermal conductivity of 220 W / m ยท K or more and a three-point bending strength of 250 MPa or more. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010215465-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011037691-A |
| priorityDate |
2003-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |