| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a16e2fa556744225f7c2bba36087e7f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0102
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-563 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 |
| filingDate |
2005-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f79cbe9367ddc6bd91faa5486058d8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a02cd1200674e47a724e0d571e23d22e |
| publicationDate |
2007-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007059440-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a heat-resistant resin film frequently used for flip chip connection using a solder bump or a gold bump and an epoxy resin compound laminated thereon, particularly after being held for a long time under high temperature and high humidity. Provided is a method for manufacturing a semiconductor device, particularly a surface modification treatment method, for improving adhesion and improving the reliability of the semiconductor device. In a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy-based resin compound layer laminated thereon, the surface of the heat-resistant resin film on which the epoxy-based resin compound layer is laminated has nitrogen, A semiconductor device manufacturing method is characterized in that plasma treatment is performed using a nitrogen atom-containing gas containing at least one of ammonia and hydrazine. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021192715-A1 |
| priorityDate |
2005-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |