http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007049168-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e077e15951d3571b54f17907a1a24b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_393b9f5d51da950f935ddaf2e6543775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd48bab1b7d9e12bedf93f2993f244e2 |
| publicationDate | 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007049168-A |
| titleOfInvention | Metal-insulating film-metal capacitor under first wiring and manufacturing method thereof |
| abstract | A metal-insulating film-metal capacitor under a first wiring and a method of manufacturing the same are provided. A metal-insulating film-metal capacitor of an integrated circuit element is formed on an interlayer insulating film 110 and covered with an intermetal insulating film 150. The intermetal insulating film 150 includes at least one first opening that exposes the upper surface of the first electrode of the metal-insulating film-metal capacitor. The first opening is embedded in the first copper damascene wiring pattern 160a, but the first copper damascene wiring is a part of a dual damascene wiring structure composed of a lowermost wiring layer (eg, M1 wiring layer). It is possible. The first copper damascene wiring pattern 160a includes a top surface and a flat top surface of the intermetal insulating film 150, and a bottom surface in contact with the top surface of the first electrode of the metal-insulating film-metal capacitor. Thereby, the heat treatment for improving the dielectric characteristics of the dielectric film 130 can be performed without being restricted by the process conditions, and a high capacitance MIM capacitor can be realized. [Selection] Figure 1B |
| priorityDate | 2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.