http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007048909-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B7-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022 |
| filingDate | 2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1db3de333d94031c48b8d63ee13cfb6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3abe9b0443e90658281e3f478c8d89b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_881a0d3b3d39dc509762365b256f123c |
| publicationDate | 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007048909-A |
| titleOfInvention | Semiconductor laser device |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor laser device with good heat dissipation. A conductive fusing layer H is formed on a conductive support member 5. On the fusion layer H, an insulating sub-substrate 31 having conductive layers 31a and 31b on the upper surface and the lower surface is provided. On the conductive layer 31 a of the sub-substrate 31, the blue-violet semiconductor laser element 10 is bonded via the fusion layer H. An insulating layer 32 is provided on the n-side pad electrode 10 b of the blue-violet semiconductor laser element 10. On the insulating layer 32, the red semiconductor laser element 20 is bonded. The insulating layer 32 has a different thickness (Z direction) between the region of the ridge Ri of the red semiconductor laser element 20 to be bonded and the other regions. A common cathode connection is realized between the blue-violet semiconductor laser element 10 and the red semiconductor laser element 20. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016532306-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011181690-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11228159-B2 |
| priorityDate | 2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.