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publicationDate 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007045682-A
titleOfInvention Silicon single crystal growth method and silicon wafer
abstract PROBLEM TO BE SOLVED: To provide a silicon single crystal growth method capable of growing a silicon single crystal including a dislocation cluster generation region and having a low LPD density of 0.09 μm or more. SOLUTION: A method for growing a silicon single crystal by the Czochralski method, wherein an atmosphere gas for growing a single crystal contains a gas containing a hydrogen-containing substance, and at least part of a radial cross section of the silicon single crystal. A method for growing a silicon single crystal in which a silicon single crystal is grown at a pulling rate at which dislocation cluster generation regions are formed and at a lower pulling rate than a pulling rate at which infrared scatterer defect generation regions are formed. [Selection] Figure 4
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Total number of triples: 29.