http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007043140-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b434d7df701edeee249e68337cfe859e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate 2006-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab2cde8f42ed952bcfae15cb12b5d141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5e644ddae7c51341e0eb1c12396e5cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba53bbaf1ad0b687ecf42d090bfb53a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6548cf723a46ad38ac1d8f9fde582c6
publicationDate 2007-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007043140-A
titleOfInvention P-channel thin film transistor, method for manufacturing p-channel thin film transistor, and display device
abstract A thin film transistor capable of manufacturing a TFT having higher electron (or hole) mobility, a method for manufacturing the thin film transistor, and a display device are provided. A thin film transistor 1 having a source region S, a channel region C, and a drain region D in a semiconductor thin film 4a crystallized in a lateral direction and having a gate insulating film 11 and a gate electrode 12 on the channel region C. Thus, the drain end 10 of the drain region D on the channel region C side is formed so as to be positioned near the end position 8 of the crystal growth. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009111053-A
priorityDate 2005-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408

Total number of triples: 17.