http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007042899-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 |
| filingDate | 2005-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bec1fd8e65ada94c6b86e4c59696cc9e |
| publicationDate | 2007-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007042899-A |
| titleOfInvention | Vapor growth equipment |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of growing a semiconductor crystal with less impurities mixed by improving the material of a soaking plate. In a semiconductor manufacturing apparatus in which a source gas is allowed to flow on a heated semiconductor substrate and a semiconductor crystal is vapor-phase grown on the semiconductor substrate, the semiconductor substrate is adjacent to the semiconductor substrate to uniformly heat the semiconductor substrate. Then, the soaking plate 7 is set between the heating source and silicon carbide or gas-impermeable carbon is used as the material of the soaking plate 7. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102439698-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008258508-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102804339-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I497570-B |
| priorityDate | 2005-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.