http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007035936-A

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filingDate 2005-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007035936-A
titleOfInvention Semiconductor light emitting device
abstract PROBLEM TO BE SOLVED: To narrow a photoluminescence width of a semiconductor light emitting element using a nitride semiconductor or a zincide semiconductor. A buffer layer, a barrier layer, a well layer, a barrier layer, and a cap layer are sequentially stacked on a crystal growth substrate, so that the well layer has a larger energy gap than the well layer. The columnar quantum well structure 27 is formed on the crystal growth substrate 21 by being sandwiched between the barrier layers 23 and 25 and cutting off both ends of the buffer layer 22, the barrier layer 23, the well layer 24, the barrier layer 25, and the cap layer 26. To do. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016100427-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010283251-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110212406-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110212406-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015018923-A
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Total number of triples: 35.