| abstract |
An object of the present invention is to provide an abrasive for CMP which can sufficiently reduce the etching rate of a wiring material but does not decrease the CMP rate in polishing in a wiring process of a semiconductor device. An abrasive for CMP containing an oxidizing agent, a metal oxide solubilizer, a protective film forming agent, a water-soluble polymer, and water, and in particular, the water-soluble polymer has a weight average molecular weight of 500 or more. The dynamic friction coefficient of the abrasive is 0.25 or more, the Ubbelohde viscosity of the abrasive is 0.95 cP or more and 1.5 cP or less, and the inflection point pressure of the abrasive is 50 gf / cm 2 or more. A certain abrasive. [Selection] Figure 1 |