| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2006-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a953d20a16a0e03217c79b4ae7b92a42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91fc1d7421977967d3ec5770473160a1 |
| publicationDate |
2007-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007013117-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
It is an object to form a low-resistance Ti silicide layer on a substrate having low heat resistance. By using a laser beam in a heat treatment process of a Ti silicide layer, a low resistance Ti silicide layer can be formed even on a substrate having low heat resistance. A Ti film is formed in contact with a semiconductor film containing silicon, a high resistance Ti silicide layer is formed by a first heat treatment, and a high resistance Ti silicide layer is formed by a second heat treatment using laser irradiation. A low resistance Ti silicide layer is formed. Since it is not necessary to perform heat treatment at a high temperature in order to form the Ti silicide layer according to the present invention, the substrate can be used without limitation. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160031615-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012503336-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012089735-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102241418-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014164268-A1 |
| priorityDate |
2005-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |