| abstract |
PROBLEM TO BE SOLVED: To provide an organic porous film manufacturing method having a relative dielectric constant of 2.2 or less and an organic porous film capable of facilitating a process such as an etching process or a cleaning liquid process for an insulating film processing process of a semiconductor device which is further miniaturized. A composition capable of forming a chemical film is provided. [Solution] [1] An insulating film forming composition containing the following components (A) and (B). Component (A): a resin obtained by polymerizing a compound represented by the formula (1), and a peak P for detecting the resin in GPC analysis, a peak M for detecting the remaining compound represented by the formula (1), and When the weight average molecular weight in terms of polystyrene of peak P is 1,000 or more and 500,000 or less, and the area values of peak P and peak M are Ap and Am, respectively, the area ratio Am / (Am + Ap) is 0 to 10%. A resin; Component (B): pore-forming compound; [2] A method for producing an insulating film, comprising a step of applying the composition according to the above [1] to a substrate and performing a heat treatment. [Selection figure] None |