| abstract |
A method of manufacturing a line device that can be miniaturized is provided. A first metal column and a second metal column are installed on a substrate. The maximum width of the first metal column is less than 4 when divided by the height of the first metal column and the second metal column. The height of the first metal column is 20 μm to 300 μm, and the distance from the center point of the first metal column to the center point of the second metal column is 10 μm to 250 μm. Thereby, the distance between the metal pillars can be reduced to 250 μm or less, and the number of pinholes can be suppressed to a target of 400 or less. Further, it is possible to effectively improve the performance of the IC and to greatly reduce the resistance and load of the IC metal connection line of the low power supply IC element. [Selection] Figure 9 |