| abstract |
【Task】 The present invention is an ultra-smooth surface of a semiconductor LSI device surface, and polishing equipment used for precision finishing processing for processing them, in particular, wear resistance and corrosion resistance of a polishing member for ultra-smoothing each part, Provided to improve performance such as anti-contamination performance, applying high-frequency pulse voltage to the polishing member under reduced pressure, and applying high-grade carbon / silicon ion implantation and a gradient structure. An article coated with a carbon film is provided. [Solution] Using a plasma-based ion implantation / film formation method, a hydrocarbon-based / silicon-based mixed gas containing at least one atom of carbon and silicon is introduced in vacuum to two or more different materials. Provided are a polishing member and a surface treatment method for forming a high-quality carbon film having a carbon + silicon ion implantation and an inclined structure by generating a plasma and applying a negative high-frequency pulse voltage. [Selection] Figure 1 |